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IS35MW04G164 - 4Gb(x8/x16) 1.8V NAND FLASH MEMORY

This page provides the datasheet information for the IS35MW04G164, a member of the IS34MW04G084 4Gb(x8/x16) 1.8V NAND FLASH MEMORY family.

Datasheet Summary

Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 45ns.

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Datasheet preview – IS35MW04G164

Datasheet Details

Part number IS35MW04G164
Manufacturer ISSI
File Size 2.16 MB
Description 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
Datasheet download datasheet IS35MW04G164 Datasheet
Additional preview pages of the IS35MW04G164 datasheet.

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Full PDF Text Transcription

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IS34MW04G084/164 IS35MW04G084/164 4Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G084/164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.
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