IS34ML04G084 - 4Gb(x8) 3.3V NAND FLASH MEMORY

Datasheet Details

Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms.
typical.
Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

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Published: Apr 30, 2019 |