IS34ML04G081 Datasheet (ISSI) - 4Gb 3.3V X8 NAND FLASH MEMORY

IS34ML04G081, 4Gb 3.3V X8 NAND FLASH MEMORY

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to pre

IS34ML04G081 Features

* Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell

* Highest performance - Read Performance - Random Read: 2