IRHM7C50SE - N-Channel Transistor

Datasheet Details

n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS.

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Published: Aug 16, 2005 |