IRHM7264SE - N-Channel Transistor

Datasheet Details

s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ V GS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC =.

📁 IRHM7264SE Similar Datasheet

IRHM7230 - (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR (International Rectifier)
IRHM7054 - RADIATION HARDENED POWER MOSFET THRU-HOLE (International Rectifier)
IRHM7160 - Radiation Hardened Power MOSFET (International Rectifier)
IRHM7360 - N-Channel Transistor (International Rectifier)
IRHM7360SE - N-CHANNEL MOSFET (International Rectifier)
IRHM7460SE - Radiation Hardened Power MOSFET (International Rectifier)
IRHM7Z60 - RADIATION HARDENED POWER MOSFET THRU-HOLE (International Rectifier)
IRHM3054 - RADIATION HARDENED POWER MOSFET THRU-HOLE (International Rectifier)

Other Datasheets by IRF

Published: Aug 16, 2005 |