IRGPH40M - INSULATED GATE BIPOLAR TRANSISTOR

IRF

IRGPH40M Datasheet Preview — Preview of IRGPH40M PDF

Datasheet Details

Part number	IRGPH40M
Manufacturer	IRF
File Size	84.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH40M_IRF.pdf

IRGPH40M Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 3.4V @VGE = 15V, I C = 18A n-channel.

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Published: Aug 23, 2005 |