IRGPH40F - INSULATED GATE BIPOLAR TRANSISTOR

IRF

IRGPH40F Datasheet Preview — Preview of IRGPH40F PDF

Datasheet Details

Part number	IRGPH40F
Manufacturer	IRF
File Size	255.03 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH40F_IRF.pdf

IRGPH40F Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, I C = 17A n-channel.

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Published: Aug 23, 2005 |