YZ21D NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 500(Min)@ IC= 2A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) APPLICATIONS. Designed for.

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Datasheet Specifications

Part number: YZ21D
Manufacturer: INCHANGE
File Size: 195.61 KB
Datasheet: YZ21D-INCHANGE.pdf
Description: NPN Power Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VALUE UNI T 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A

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YZ21D NPN Power Transistor INCHANGE

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