YZ21 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 2A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min). Minimum Lot-to-Lot variat.

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Datasheet Specifications

Part number: YZ21
Manufacturer: INCHANGE
File Size: 202.90 KB
Datasheet: YZ21-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A

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YZ21 NPN Transistor INCHANGE

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