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TK58E06N1 N-Channel MOSFET

TK58E06N1 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK58E06N1，ITK58E06N1 *.

TK58E06N1 Features

* Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V)
* Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators

TK58E06N1 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TK58E06N1
Manufacturer
INCHANGE
File Size
241.90 KB
Datasheet
TK58E06N1-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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