TK2P90E - N-Channel MOSFET

INCHANGE

Datasheet Details

Low drain-source on-resistance: RDS(on) ≤2.9Ω.
Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.2mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 9, 2020 |