Datasheet4U Logo Datasheet4U.com

TIP101 NPN Transistor

TIP101 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TIP101 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

TIP101 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A I

📥 Download Datasheet

Preview of TIP101 PDF
datasheet Preview Page 2

Datasheet Details

Part number
TIP101
Manufacturer
INCHANGE
File Size
208.99 KB
Datasheet
TIP101-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • TIP100 - NPN Epitaxial Silicon Transistor (SemiHow)
  • TIP102 - NPN Epitaxial Silicon Transistor (SemiHow)
  • TIP105 - Darlington PNP Power Transistors (TAITRON)
  • TIP106 - Darlington PNP Power Transistors (TAITRON)
  • TIP107 - Darlington PNP Power Transistors (TAITRON)
  • TIP110A - PNP Epitaxial Silicon Transistor (First Components International)
  • TIP116 - PNP Epitaxial Silicon Darlington Transistors (MCC)
  • TIP117 - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE TIP101-like datasheet