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STD5NM50T4 N-Channel MOSFET

STD5NM50T4 Description

isc N-Channel MOSFET Transistor STD5NM50T4 *.

STD5NM50T4 Features

* Static drain-source on-resistance: RDS(on)≤0.8Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

STD5NM50T4 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage T

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Datasheet Details

Part number
STD5NM50T4
Manufacturer
INCHANGE
File Size
273.26 KB
Datasheet
STD5NM50T4-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STD5NM50T4-like datasheet