STD5NM50T4 Datasheet - INCHANGE

STD5NM50T4, N-Channel MOSFET

isc N-Channel MOSFET Transistor STD5NM50T4 *

Features

* Static drain-source on-resistance: RDS(on)≤0.8Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage T

STD5NM50T4-INCHANGE.pdf