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STD11NM50N N-Channel MOSFET

STD11NM50N Description

Isc N-Channel MOSFET Transistor STD11NM50N *.

STD11NM50N Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STD11NM50N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 8.5 6 34 PD Total Dissipation @TC=25℃ 70 Tch Max. Operating Ju

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Datasheet Details

Part number
STD11NM50N
Manufacturer
INCHANGE
File Size
258.12 KB
Datasheet
STD11NM50N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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