STD4NK60ZT4 Datasheet - INCHANGE

STD4NK60ZT4, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static drain-source on-resistance : RDS(on) ≤ 2Ω@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 70 Tj Max. Operating Junction Temperat

STD4NK60ZT4-INCHANGE.pdf