STD18N65M5 Datasheet - INCHANGE

STD18N65M5, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD18N65M5 *

Features

* Higher VDSS rating
* Excellent switching performance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±25 15 9.4 60 PD Total Dissipation @TC=25℃ 110 Tch

STD18N65M5-INCHANGE.pdf