STD18N55M5 Datasheet - INCHANGE

STD18N55M5, N-Channel MOSFET

Isc N-Channel MOSFET Transistor STD18N55M5 *

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 550 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 13 8.3 52 PD Total Dissipation @TC=25℃ 90 Tch Max. Operating Ju

STD18N55M5-INCHANGE.pdf