STB18NM60ND Datasheet - INCHANGE

STB18NM60ND, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Drain Current
* ID= 13A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Tempe

STB18NM60ND-INCHANGE.pdf