STB18NM60N Datasheet - INCHANGE

STB18NM60N, N-Channel MOSFET

isc N-Channel Mosfet Transistor *

Features

* Drain Current ID= 13A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 13 A IDM Pulse Drain Current 52 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Oper

STB18NM60N-INCHANGE.pdf