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SPP15P10P N-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor SPP15P10P,ISPP15P10P *.
Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use i.

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Datasheet Specifications

Part number
SPP15P10P
Manufacturer
INCHANGE
File Size
239.02 KB
Datasheet
SPP15P10P-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.24Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -15 IDM Drain Current-Single Pulsed -60 PD Total Dissipation @TC=25℃ 128 Tj Max. Operating Junction Temperature 175 Tstg Storag

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