SPP11N80C3 N-Channel MOSFET

INCHANGE

SPP11N80C3 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 *.

SPP11N80C3 Features

* Ultra low effective capacitances
* Low gate charge
* Improved transconductance
* Low gate drive power loss
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPP11N80C3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 11 7.1 33 PD Total Dissipation 156 Tj Operating Junction Tempe

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Datasheet Details

Part number: SPP11N80C3
Manufacturer: INCHANGE
File Size: 201.66 KB
Datasheet: SPP11N80C3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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