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SPD15P10PL P-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
SPD15P10PL
Manufacturer
INCHANGE
File Size
259.97 KB
Datasheet
SPD15P10PL-INCHANGE.pdf
Description
P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max. Operating Junction Temperature -55~175

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