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SPD15P10PG P-Channel MOSFET

SPD15P10PG Description

isc P-Channel MOSFET Transistor *.

SPD15P10PG Features

* Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPD15P10PG Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max. Operating Temperature Junction -55~

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Datasheet Details

Part number
SPD15P10PG
Manufacturer
INCHANGE
File Size
259.96 KB
Datasheet
SPD15P10PG-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
INCHANGE SPD15P10PG-like datasheet