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SPB08P06P P-Channel MOSFET

SPB08P06P Description

isc P-Channel MOSFET Transistor *.

SPB08P06P Features

* Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPB08P06P Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -8.8 PD Total Dissipation @TC=25℃ 42 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Te

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Datasheet Details

Part number
SPB08P06P
Manufacturer
INCHANGE
File Size
249.24 KB
Datasheet
SPB08P06P-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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