SPB11N60C3 N-Channel MOSFET

INCHANGE

SPB11N60C3 Description

Isc N-Channel MOSFET Transistor SPB11N60C3 *.

SPB11N60C3 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPB11N60C3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 11 7 33 PD Total Dissipation @TC=25℃ 125 Tch Max. Operating Jun

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SPB11N60C3 Datasheet Preview — Preview of SPB11N60C3 PDF

Datasheet Details

Part number: SPB11N60C3
Manufacturer: INCHANGE
File Size: 254.37 KB
Datasheet: SPB11N60C3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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