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RD3U060CN N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor RD3U060CN .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number
RD3U060CN
Manufacturer
INCHANGE
File Size
260.51 KB
Datasheet
RD3U060CN-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 6A@ TC=25℃
* Drain Source Voltage- : VDSS= 250V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 530mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 52 W TJ Max. Operating Junction Temperatur

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