RD3H045SP - P-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	RD3H045SP
Manufacturer	INCHANGE
File Size	261.01 KB
Description	P-Channel MOSFET
Datasheet	RD3H045SP-INCHANGE.pdf

RD3H045SP Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -4.5 A IDM Drain Current-Single Pluse -9 A PD Total Dissipation @TC=25℃ 15 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Res

Features

Drain Current.
ID= -4.5A@ TC=25℃.
Drain Source Voltage- : VDSS= -45V(Min).
Static Drain-Source On-Resistance : RDS(on) = 155mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 15, 2021 |