Datasheet4U Logo Datasheet4U.com

MJE701T - PNP Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – MJE701T

Datasheet Details

Part number MJE701T
Manufacturer INCHANGE
File Size 210.75 KB
Description PNP Transistor
Datasheet download datasheet MJE701T Datasheet
Additional preview pages of the MJE701T datasheet.

Product details

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = -60 V DC Current Gain : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A Complement to Type MJE801T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter

📁 Similar Datasheet

  • MJE701 - PNP Epitaxial Silicon Darlington Transistor (Fairchild)
  • MJE700G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • MJE700T - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
  • MJE702G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • MJE703G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • MJE710 - COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS (Central Corp)
  • MJE711 - COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS (Central Corp)
  • MJE712 - COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS (Central Corp)
Other Datasheets by INCHANGE
Published: |