MJE701 Datasheet (Fairchild) - PNP Epitaxial Silicon Darlington Transistor

MJE701, PNP Epitaxial Silicon Darlington Transistor

MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1.

Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 15