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JCS650S N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor JCS650S .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number
JCS650S
Manufacturer
INCHANGE
File Size
250.63 KB
Datasheet
JCS650S-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 28A@ TC=25℃
* Drain Source Voltage- : VDSS=200V(Min)
* Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Pluse 112 A PD Total Dissipation @TC=25℃ 158 W TJ Max. Operating Junction Tempera

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