JCS60N10 Key Features
- Low gate charge -Low Rdson -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- 55～+150
- V 1 μA 20 μA
- 100 nA
- 100 nA
- 14.0 16.0 mΩ
- Part: JCS60N10
- Manufacturer: JILIN SINO
- Size: 535.29 KB
Related JILIN SINO Datasheets
| Part Number | Description |
|---|---|
| JCS60N10I | N-CHANNEL MOSFET |
| JCS620CT | N-CHANNEL MOSFET |
| JCS620FT | N-CHANNEL MOSFET |
| JCS620RT | N-CHANNEL MOSFET |
| JCS620T | N-CHANNEL MOSFET |
JCS60N10 Description
JCS60N10I N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 用途 高功率 DC/DC 转换与 功率开关 直流电机控制 汽车应用 不间断电源 产品特性 低栅极电荷 低 Rdson 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS 产品 60A 100V 16mΩ 51nC APPLICATIONS High power DC/DC converters and switch mode power supplies DC motor control Automotive applications Uninterruptible power supply.