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IXTQ200N10T - N-ChannelMOSFET

INCHANGE

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Datasheet Details

Part number	IXTQ200N10T
Manufacturer	INCHANGE
File Size	251.88 KB
Description	N-ChannelMOSFET
Datasheet	IXTQ200N10T-INCHANGE.pdf

IXTQ200N10T Product details

Features

Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 21, 2020 |