IXTH20N60 - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

IXTH20N60 Datasheet Preview — Preview of IXTH20N60 PDF

Datasheet Details

Part number	IXTH20N60
Manufacturer	INCHANGE
File Size	322.93 KB
Description	N-Channel MOSFET
Datasheet	IXTH20N60-INCHANGE.pdf

IXTH20N60 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±20 V 20 A 80 A 300 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current ID= 20A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IXTH20N60 Similar Datasheet

IXTH20N65X - Power MOSFET (IXYS)
IXTH20N50D - High Voltage MOSFET (IXYS)
IXTH200N075T - Power MOSFET (IXYS Corporation)
IXTH200N085T - Power MOSFET (IXYS Corporation)
IXTH200N10T - Power MOSFET (IXYS Corporation)
IXTH20P50P - Power MOSFET (IXYS)
IXTH21N50 - MegaMOSFET (IXYS Corporation)
IXTH220N055T - Power MOSFET (IXYS Corporation)

Other Datasheets by INCHANGE

IXTH220N075T - N-Channel MOSFET
IXTH22N50P - N-Channel MOSFET
IXTH230N085T - N-Channel MOSFET
IXTH240N055T - N-Channel MOSFET
IXTH24N50L - N-Channel MOSFET
IXTH24N50Q - N-Channel MOSFET

Published: Nov 11, 2020 |