IXTH20P50P Datasheet - IXYS

IXTH20P50P Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT20P50P IXTH20P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings.

IXTH20P50P Features

* International Standard Packages

* Avalanche Rated

* Rugged PolarPTM Process

* Low Package Inductance

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High-Side Switches

* Push Pull Amplifiers

* DC Chop

IXTH20P50P Datasheet (280.75 KB)

IXTH20P50P Datasheet Preview — Preview of IXTH20P50P PDF

Datasheet Details

Part number:

IXTH20P50P

Manufacturer:

IXYS

File Size:

280.75 KB

Description:

Power mosfet.

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IXTH20P50P Power MOSFET IXYS

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