IXTA76N25T N-Channel MOSFET

INCHANGE

IXTA76N25T Description

isc N-Channel MOSFET Transistor *.

IXTA76N25T Features

* Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTA76N25T Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 76 IDM Drain Current-Single Pulsed 170 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~150 Tstg Storage Te

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Datasheet Details

Part number: IXTA76N25T
Manufacturer: INCHANGE
File Size: 250.88 KB
Datasheet: IXTA76N25T-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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