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IRLZ34N N-Channel MOSFET

IRLZ34N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ34N， IIRLZ34N *.

IRLZ34N Features

* Static drain-source on-resistance: RDS(on) ≤35mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRLZ34N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRLZ34N
Manufacturer
INCHANGE
File Size
241.49 KB
Datasheet
IRLZ34N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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