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IRLZ24N N-Channel MOSFET

IRLZ24N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ24N， IIRLZ24N *.

IRLZ24N Features

* Static drain-source on-resistance: RDS(on) ≤0.06Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRLZ24N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 175 Tstg Storage Temp

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Datasheet Details

Part number
IRLZ24N
Manufacturer
INCHANGE
File Size
241.50 KB
Datasheet
IRLZ24N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRLZ24N-like datasheet