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IRLR8103V N-Channel MOSFET

IRLR8103V Description

Isc N-Channel MOSFET Transistor IRLR8103V *.

IRLR8103V Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRLR8103V Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=90℃ Drain Current-Single Pulsed ±20 91 63 363 PD Total Dissipation @TC=25℃ 115 Tch Max. Operating Ju

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Datasheet Details

Part number
IRLR8103V
Manufacturer
INCHANGE
File Size
258.22 KB
Datasheet
IRLR8103V-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRLR8103V-like datasheet