Datasheet4U Logo Datasheet4U.com

IRLR8256 N-Channel MOSFET

IRLR8256 Description

isc N-Channel MOSFET Transistor IRLR8256, IIRLR8256 *.

IRLR8256 Features

* Static drain-source on-resistance: RDS(on)≤5.7mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High efficiency
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IRLR8256 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRLR8256 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRLR8256
Manufacturer
INCHANGE
File Size
238.06 KB
Datasheet
IRLR8256-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRLR8256PBF - 25V Single N-Channel HEXFET Power MOSFET (International Rectifier)
  • IRLR8259PBF - 25V Single N-Channel HEXFET Power MOSFET (International Rectifier)
  • IRLR8203 - HEXFET Power MOSFET (International Rectifier)
  • IRLR8203PBF - SMPS MOSFET (International Rectifier)
  • IRLR8103 - HEXFET Chipset for DC-DC Converters (International Rectifier)
  • IRLR8103V - N-Channel MOSFET (International Rectifier)
  • IRLR8103VPBF - POWER MOSFET (International Rectifier)
  • IRLR8113 - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRLR8256-like datasheet