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IRL60S216 N-Channel MOSFET

IRL60S216 Description

Isc N-Channel MOSFET Transistor IRL60S216 *.

IRL60S216 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRL60S216 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 298 210 780 PD Total Dissipation @TC=25℃ 375 Tch Max. Operating

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Datasheet Details

Part number
IRL60S216
Manufacturer
INCHANGE
File Size
254.10 KB
Datasheet
IRL60S216-INCHANGE.pdf
Description
N-Channel MOSFET

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INCHANGE IRL60S216-like datasheet