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IRL60B216 N-Channel MOSFET

IRL60B216 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL60B216，IIRL60B216 *.

IRL60B216 Features

* Static drain-source on-resistance: RDS(on) ≤1.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRL60B216 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 780 PD Total Dissipation @TC=25℃ 375 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRL60B216
Manufacturer
INCHANGE
File Size
241.96 KB
Datasheet
IRL60B216-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRL60B216-like datasheet