Datasheet4U Logo Datasheet4U.com

IRL40B215 N-Channel MOSFET

IRL40B215 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B215，IIRL40B215 *.

IRL40B215 Features

* Static drain-source on-resistance: RDS(on) ≤2.7mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRL40B215 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 656 PD Total Dissipation @TC=25℃ 143 Tj Max. Operating Junction Temperature 175 Tstg Storage T

📥 Download Datasheet

Preview of IRL40B215 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRL40B215
Manufacturer
INCHANGE
File Size
241.93 KB
Datasheet
IRL40B215-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRL40B212 - Power MOSFET (International Rectifier)
  • IRL40B209 - Power MOSFET (International Rectifier)
  • IRL40DM247 - MOSFET (Infineon)
  • IRL40S212 - Power MOSFET (International Rectifier)
  • IRL40SC209 - Power MOSFET (Infineon)
  • IRL40SC228 - Power MOSFET (Infineon)
  • IRL1004 - HEXFET Power MOSFET (International Rectifier)
  • IRL1004L - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRL40B215-like datasheet