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IRFU9024N P-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IRFU9024N
Manufacturer
INCHANGE
File Size
256.41 KB
Datasheet
IRFU9024N-INCHANGE.pdf
Description
P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -11 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -55~150

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