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IRFSL4610 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IRFSL4610
Manufacturer
INCHANGE
File Size
282.26 KB
Datasheet
IRFSL4610-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤13.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 190 Tj Max. Operating Junction Temperature -55~150 Tstg Storag

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