IRFSL4620PBF, IRFS4620PBF Datasheet - International Rectifier

IRFSL4620PBF N-Channel HEXFET Power MOSFET

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 200V 63.7m: 77.5m: 24A D S G G D S D2Pak IRFS4620PbF T.

IRFSL4620PBF Features

* on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature,

IRFS4620PBF_InternationalRectifier.pdf