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IRFB4610 N-Channel MOSFET

IRFB4610 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4610，IIRFB4610 *.

IRFB4610 Features

* Static drain-source on-resistance: RDS(on) ≤14mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4610 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 73 IDM Drain Current-Single Pulsed 290 PD Total Dissipation @TC=25℃ 190 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRFB4610
Manufacturer
INCHANGE
File Size
241.66 KB
Datasheet
IRFB4610-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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