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IRFB4615PBF - N-Channel HEXFET Power MOSFET

Features

  • . 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cy.

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PD -96171 IRFB4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4615PbF D G S VDSS RDS(on) typ. max. ID 150V 32m: 39m: 35A G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. 35 25 140 144 0.96 ± 20 38 -55 to + 175 300 10lb in (1.1N m) 109 See Fig. 14, 15, 22a, 22b, mJ A mJ Units A W W/°C V V/ns ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current www.
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