IPP040N06N N-Channel MOSFET

INCHANGE

IPP040N06N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N，IIPP040N06N *.

IPP040N06N Features

* Static drain-source on-resistance: RDS(on) ≤4.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP040N06N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 107 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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IPP040N06N Datasheet Preview — Preview of IPP040N06N PDF

Datasheet Details

Part number: IPP040N06N
Manufacturer: INCHANGE
File Size: 241.56 KB
Datasheet: IPP040N06N-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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