IPP041N12N3G Power-Transistor

Infineon Technologies AG

IPP041N12N3G Description

IPP041N12N3 G OptiMOSTM3 Power-Transistor .

IPP041N12N3G Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant, halogen free
* Qualified

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Datasheet Details

Part number: IPP041N12N3G
Manufacturer: Infineon ↗ Technologies AG
File Size: 873.00 KB
Datasheet: IPP041N12N3G_InfineonTechnologiesAG.pdf
Description: Power-Transistor

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Power-Transistor Infineon Technologies AG

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