IPD60R380E6 N-Channel MOSFET

INCHANGE

IPD60R380E6 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD60R380E6 *.

IPD60R380E6 Features

* With TO-252(DPAK) packaging
* With low gate drive requirements
* Very high commutation ruggedness
* Extremely high frequency operation
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPD60R380E6 Applications

* Switching applications
* LCD&PDP TV
* PC silverbox
* UPS and solar
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM PD Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipatio

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IPD60R380E6 Datasheet Preview — Preview of IPD60R380E6 PDF

Datasheet Details

Part number: IPD60R380E6
Manufacturer: INCHANGE
File Size: 206.43 KB
Datasheet: IPD60R380E6-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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